Abstract
The scaling dependence of electron transport in the double-gated Schottky barrier MOSFET (DG-SBT) below 10 nm is investigated in the framework of quantum transport theory, using non-equilibrium Green’s function method. Simulation results show that the current-voltage characteristics in ultra-small DG-SBT are characterized by both resonant and direct tunneling effects. The electron potential in the 10-nm-scale DG-SBT surrounded by Schottky barriers acts as a resonant cavity and produce a negative differential resistance due to resonant tunneling effect. While, further scaling shallows the depth of the cavity and makes it difficult to form resonance levels. Hence, at the scaling limit, direct tunneling currents simply dominate the current-voltage characteristics of DG-SBT.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
