Scaling behavior of the BaZr0.1Ti0.9O3 (BZT) dielectric ceramic at the elevated temperatures (400 °C – 540 °C)

Abstract

Scaling behavior and conduction mechanism of lead-free BaZr0.1Ti0.9O3 (BZT) dielectric ceramic is studied at the elevated temperatures between 400 to 540 ° C. Single-phase with tetragonal BZT ceramic P4 mm is formed. The XPS analysis confirms the Zr-doping at the Ti-site. Conductivity phenomena confirm that the conduction process of charge carriers is governed by oxygen vacancies at all temperatures. Impedance analysis shows a decrement in the impedance with the increase in temperature. Nyquist analysis reveals the decrease in grain and grain boundary resistances at higher temperatures. Non-Debye type behavior is confirmed by the Modulus spectroscopy and normalized master curves of electrical modulus confirm existence of the same conduction mechanism at all the temperatures. The scaling behavior of the BZT ceramic shows that conduction mechanism shifts from the long-range mobility of the charge carriers towards short-range mobility with increasing frequencies due to thermal agitation at elevated temperatures.