Scaling analysis of anomalous Hall resistivity and magnetoresistance in the quasi-two-dimensional ferromagnet Fe3GeTe2

Abstract

${\mathrm{Fe}}_{3}{\mathrm{GeTe}}_{2}$ is a two-dimensional van der Waals bonded layered compound that shows high-temperature itinerant ferromagnetism. We study aspects of the scattering mechanism in the single crystal of high-${T}_{\text{C}}\phantom{\rule{4pt}{0ex}}{\mathrm{Fe}}_{3}{\mathrm{GeTe}}_{2}$ via resistivity, magnetotransport, and Hall effect measurements. The quadratic temperature dependence of electrical resistivity below the ${T}_{\text{C}}$ (210 K) points towards the dominance of electron-magnon scattering. A nonsaturating positive magnetoresistance (MR) is observed at low temperatures when the magnetic field is applied parallel to the sample plane. The linear negative MR at high fields for $T<{T}_{\text{C}}$ corroborates to the suppression in the magnon population due to the damping of spin waves. In the high-temperature regime ($T>{T}_{\text{C}}$), MR can be described by the scattering from spin fluctuations using the Khosla and Fischer model. Isothermal Hall resistivity curves unveil the presence of anomalous Hall resistivity. The correlation between magnetoresistance and side jump mechanism further reveals that the electron-magnon scattering is responsible for the side jump contribution to the anomalous Hall effect. Our results provide a clear understanding of the role of electron-magnon scattering on the temperature-driven evolution of the anomalous Hall effect that rules out its origin to be the topological band structure.