Abstract
Scaling of MOS circuits is resulting in transistors exhibiting increased narrow width effects in addition to the usual short channel poblems. In this paper we present a technique for reducing these narrow width effects by using HIPOX to grow the isolation oxide. HIPOX allows us to reduce the channel stop dose, hence reducing moat encroachment, while at the same time maintaining adequate isolation between devices. Data is presented on moat encroachment, thick field transistors and moat diodes as well as a discussion of simulation results. The relationship and trade offs between each of these is examined.
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