Abstract

We report the growth of wafer-scale arrays of individually position-controlled and vertically aligned ZnO nanotube arrays on graphene deposited by chemical vapor deposition (CVD-graphene). Introducing two-dimensional layered materials such as graphene as a growth buffer has recently been suggested for growing nanomaterials on traditionally incompatible substrates. However, their growth has been restricted to small areas or had limited controllability. Here, we study the distinct growth behavior of ZnO on CVD-graphene that makes the selective area growth of individual nanostructures on its surface difficult, and propose a set of methods to overcome this. The resulting nanotube arrays, as examined by scanning electron microscopy and transmission electron microscopy, exhibited uniform morphologies and high structural quality over a large area and could be prepared on a broad variety of substrates, including amorphous, metallic, or flexible substrates.

Highlights

  • We report the growth of wafer-scale arrays of individually position-controlled and vertically aligned ZnO nanotube arrays on graphene deposited by chemical vapor deposition (CVD-graphene)

  • Previous reports of growth on graphene deposited by chemical vapor deposition (CVD-graphene) have shown unsatisfactory growth controllability, with a lack of individual position control, low growth selectivity, or poor vertical alignment.[16,17]

  • This difference in growth behavior likely resulted from a much higher density of step edges and grain boundaries in CVD-graphene compared with exfoliated graphene, as evidenced by their differences in surface roughness (AFM data in Fig. S1 of the supplementary material) and structural defects (Raman spectra in Fig. S2 of the supplementary material)

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Summary

Introduction

We report the growth of wafer-scale arrays of individually position-controlled and vertically aligned ZnO nanotube arrays on graphene deposited by chemical vapor deposition (CVD-graphene). In previous work reporting ZnO nanotube arrays grown using metal-organic vapor-phase epitaxy (MOVPE) on exfoliated graphene,[15] the mechanically cleaved surface of graphene was shown to exhibit a small density of nucleation sites, with slight growth occurring presumably along the step edges of the graphene films (Fig. 1(a)).

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