Abstract
A general approach was developed to fabricate graphene/semiconducting single-wall carbon nanotube (graphene/s-SWCNT) film Schottky junctions on a large scale. The graphene/s-SWCNT film photodiodes array based on the vertically stacked Schottky junction were fabricated. The all-carbon cross-shaped structure consisted of multielement graphene/s-SWCNT Schottky photodiodes and presented a rich collection of electronics and photonics. The as-fabricated carbon-based photodiode presented an ultra-broadband photodetection characteristic with a high responsivity of 1.75 A/W at near-infrared wavelengths and a fast response rise time of 15 μs. The as-fabricated device clearly showed gate-tunable and wavelength-dependent photoelectric characteristic. Moreover, the corresponding photocurrent excitation spectrum was also demonstrated. In particular, the Si compatible and high throughput fabrication process for the devices made it conducive for large-area multielement optoelectronics devices.
Highlights
Carbon nanomaterials, such as graphene and carbon nanotubes (CNT), are taken as the most promising candidates for next-generation materials for integrated electronic device application because of their astonishing physical properties [1,2,3,4]
The single semiconducting single-wall carbon nanotube (SWCNT)(s-SWCNT)-based devices have been especially developed for nano electronic and photonic devices [4,6], the device manufacturing based on a single SWCNT is technically complex and not compatible with the traditional Si process, hindering their wide applications
The atomic force microscopy (AFM) (Dimension ICON, cross-shaped structure composed of two stacked carbon-based films, the top graphene layer, Bruker-China, Beijing, China )observations were performed in the tapping mode
Summary
Carbon nanomaterials, such as graphene and carbon nanotubes (CNT), are taken as the most promising candidates for next-generation materials for integrated electronic device application because of their astonishing physical properties [1,2,3,4]. The single-wall carbon nanotube (SWCNT) has been investigated widely for nano integrated circuit application based on the purification technology of CNTs [3,4,5,6]. Hybrid graphene/CNT materials show intriguing potential for widespread application [7,8,9], which offers new opportunities for optoelectronics applications. It is significant for the practical preparation and development of the carbon-based optoelectronic devices, which has attracted increasing attention [9,10,11]. In a variety of devices, the metal/semiconductor Schottky photodiode—the basic key component in integrated circuits
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