Abstract
Scalable fabrication of high quality graphene devices is highly desired and important for the practical applications of graphene material. Graphene devices are massively fabricated on SiO2/Si substrate through an efficient process, which combines large scaled growth of monolayer graphene on Pt foil, modified bubbling transfer and photolithography-based device fabrication. These graphene devices present yield up to 86% (70 out of 81), field-effect mobility around 2500 cm2 V−1 S−1 and Dirac point voltage near to 0 V, as well as a narrow performance metrics distribution. In addition, as-fabricated graphene Hall elements through this process exhibit high current sensitivity typically up to 1200 V/AT.
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