Scalable Creation of Deep Silicon‐Vacancy Color Centers in Diamond by Ion Implantation through a 1‐μm Pinhole

Abstract

AbstractThe controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single‐photon devices. Here, the scalable production of silicon‐vacancy (SiV) color centers in single‐crystal diamond by ion implantation up to m depths is presented. The lateral position of the SiV is spatially controlled by a 1‐m pinhole placed in front of the sample, which can be moved nanometer precise using a piezo stage. The initial implantation position is controlled by monitoring the ion beam position with a camera. Hereby, silicon ions are implanted at the desired spots in an area comparable to the diffraction limit. The role of ions scattered by the pinhole and the activation yield of the SiV color centers for the creation of single quantum emitters is also discussed.