Abstract
Low-temperature synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) is a key challenge for their integration with complementary metal-oxide-semiconductor (CMOS) technology at ‘back-end-of-line (BEOL)’. Most low-temperature synthesis utilizes alkali salts, oxide-based metals, and methyl-group based chalcogen precursors which do not meet current BEOL requirements for contaminant-free manufacturing and process scalability. In this study, we benchmark a carbon and alkali salt-free synthesis of fully coalesced, stoichiometric 2D WSe2 films on amorphous SiO2/Si substrates at BEOL- compatible temperatures (475 °C) via gas-source metal-organic chemical deposition. This work highlights the necessity of a Se-rich environment in a kinetically limited growth regime for successful integration of low-temperature 2D WSe2. Atomic-scale characterization reveals that BEOL WSe2 is polycrystalline with domain size of ~200 nm and band gap of 1.8 eV. Back-gated and electrolyte double layer gated field-effect transistors (FETs) exhibit increased ON currents as high as 4 µA µm−1 and ON/OFF ratios of ~106, demonstrating a 100× improvement compared to previously reported BEOL compatible TMDs.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
