Scalable behavior modeling for SCR based ESD protection structures for circuit simulation

Li Wang,Zongyu Dong,Liji Wu,Chen Zhang,Albert Wang,Fei Lu,Baoyong Chi,He Tang,T L Ren,Xin Wang,Jian Liu,Siqiang Fan,Rui Ma

doi:10.1109/iscas.2014.6865639

Scalable behavior modeling for SCR based ESD protection structures for circuit simulation

Li Wang, Zongyu Dong + Show 11 more

https://doi.org/10.1109/iscas.2014.6865639

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Publication Date: Jun 1, 2014

Citations: 1

Affiliation: University of California, Riverside, Tsinghua University, University of Electronic Science and Technology of China, OmniVision Technologies (United States)

#Silicon Controlled Rectifier #Electrostatic Discharge Protection Structures + Show 8 more

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Abstract

This paper reports a new scalable behavioral modeling technique for silicon controlled rectifier (SCR) based electrostatic discharge (ESD) protection structures using Verilog-A language. Accurate models were developed for various low-triggering voltage SCR ESD (LVSCR) protection structures implemented in a foundry 180nm RF process, which were validated by circuit simulation and ESD measurement.

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