Abstract
The effects of SbVO4 addition on the microstructure, electrical properties and characteristics of grain and grain boundary of ZnO–V2O5 based varistor ceramics were studied using SEM, E–J measurements and impedance spectroscopy. XRD analysis revealed that all the samples consist of main phase of ZnO and the second phase of BiVO4 and Zn7Sb2O12. The microstructural homogeneity of the ceramic was improved through adding SbVO4. With an increase of SbVO4, the average grain sizes decrease from 16.1 to 6.1 μm. The resistivity of grain boundary is approximately constant (~103 Ω). The ZnO–V2O5-based varistor ceramics added with 0.3 mol % SbVO4 sintered at 940 °C for 4 h exhibited good nonlinear properties of α = 51, J = 13.4 μA/mm2 and E 1mA = 416 V/mm.
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