Abstract
Photoemission spectroscopy and reflection high-energy electron diffraction were employed to investigate the Sb/InP(100) interface with emphasis on properties important to the use of Sb as a surfactant to mediate the growth of coherently strained Ge films on InP(100) substrates. The reactivity of Sb with the InP substrate at elevated temperatures resulted in a relaxed InSb phase that did not exhibit desired surfactant performance. Therefore, the surfactant layer was deposited at room temperature. The first monolayer of Sb forms an ordered layer which may be an important prerequisite for the site-exchange process during the surfactant mediated growth. At elevated temperatures the incorporation rate of Sb in the Ge film is negligible for films on the order of the critical thickness.
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