Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application

Abstract

In this paper, Sb52Se36Te12 is proposed for its good data retention and extremely rapid crystallization speed. Compared with usual Ge2Sb2Te5, Sb52Se36Te12 exhibits a higher crystallization temperature of 196○C, a better thermal stability, indicating a brilliant performance for data retention of 10 years at 121○C, and a much faster switching speed, which is demonstrated by an electric pulse as short as 8ns that can fulfil the set operation. Thus, Sb52Se36Te12 could be expected to have a wide application in the fields of phase change memory with rapid crystallization speed and high-temperature data retention.