Abstract
The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of Sb₂O₃ concentration. Leakage conduction in the ohmic region increased with increasing Sb₂O₃ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of Sb₂O₃. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with Sb₂O₃ additive was attributed to the lowered capacitance in the grain boundary layer.
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