Sb‐treatment effect of GaAs substrate on Sb‐doped Cd1–xMnxTe growth by MOVPE

Abstract

AbstractSb‐doped Cd1–x Mnx Te was successfully grown on (100)GaAs substrate by metal‐organic vapor phase epitaxy under atmospheric pressure by Sb‐treatment of the GaAs substrate prior to the growth. The Sb‐treatment of GaAs substrate creates a GaSb layer on the GaAs substrate, which relaxes the lattice misfit between the GaAs substrate and the Sb‐doped Cd1–x Mnx Te. The best FWHM of (400) diffraction of Sb‐doped Cd1–x Mnx Te was 580 seconds, where the TESb supply rate of the Sb‐treatment was 2.2 μmol/min. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)