Abstract
Self-assembled InAs quantum dots (QDs) with high-density were grown on GaAs(0 0 1) substrates by antimony (Sb)-mediated molecular beam epitaxy technique using GaAsSb/GaAs buffer layer and InAsSb wetting layer (WL). In this Sb-mediated growth, many two-dimensional (2D) small islands were formed on those WL surfaces. These 2D islands provide high step density and suppress surface migration. As the results, high-density InAs QDs were achieved, and photoluminescence (PL) intensity increased. Furthermore, by introducing GaAsSb capping layer (CL), higher PL intensity at room temperature was obtained as compared with that InGaAs CL.
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