Abstract
ZnO thin films were formed by oxidation of ZnS films on Si substrates. Sb doping of ZnO films was tried by laser irradiation of ZnO deposited with Sb. Although p-type ZnO:Sb film was not obtained, it was observed that the laser irradiation increased the near-ultraviolet (NUV) emission intensity, whereas the visible emission of oxygen vacancies decreased. Moreover, the resistance of the laser-irradiated ZnO:Sb films was higher than that of films without irradiation. These results show that Sb compensates the oxygen vacancy; as a result, the electrons are neutralized by holes generated by the dopant (Sb).
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