Abstract
Antimony layers, sandwiched between a ZnSe/InP(100) heterostructure interface, can be used as a barrier preventing outdiffusion of In into ZnSe epilayers. Through core level photoemission spectroscopy and reflection high-energy electron diffraction investigations, we found that the Sb layer must be annealed in order to prevent In outdiffusion. Barrier action occurs by means of InSb formation. A single pseudomorphic monolayer was insufficient to prevent In from outdiffusing. A thicker Sb layer greatly reduced In outdiffusion but through misfit dislocation the initially strained InSb film relaxed to its bulk lattice constant and did not allow for subsequent pseudomorphic epitaxy of strained ZnSe overlayers.
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