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Abstract
Thin films of SnO 2 have been implanted with 90 keV 121Sb and 209Bi up to a dose of 3 x 10 16 ions/cm 2. Sb causes a four orders of magnitude reduction in sheet resistance and introduces electrons into the Sn 5s conduction band: these electrons can be seen directly in UV photoemission spectra. Bi is a less effective dopant but improves the selectivity of the films toward CO relative to CH 4 in gas-sensor applications.
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