Abstract
It is experimentally shown that the Mn2+ ionic subsystem in the three-and two-dimensional structures of diluted magnetic semiconductors of the II–VI groups is saturated upon pulsed excitation by high-power laser radiation with a wavelength of 532.1 nm at temperatures of 77 and 4 K. The direct excitation under these conditions leads to saturation of the inhomogeneously broadened 4 T 1 level of a part of Mn2+ ions, which is confirmed by the estimation of the fraction of excited ions. Processing of the integral kinetic curves of the intracenter luminescence band in the region of 2 eV shows that an increase in the excitation intensity gives rise to a fast component with a decreasing lifetime. Based on the data obtained, it is assumed that, along with the previously studied cooperative effect, redistribution occurs of excitation from localized to delocalized states as a result of more effective saturation of the former.
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