Abstract
We report on the photoresponse of AlGaN/GaN high electron mobility transistors to the THz radiation of low (15 mW/cm2) and high (up to 40 kW/cm2) intensities. We show that the response can be described by the Dyakonov-Shur theory in the whole range of radiation intensity. At low intensities, the photoresponse is linear in radiation intensity. Under intense laser radiation, we observe a saturation at intensities >20 kW/cm2. We explain our results by the change of the channel conductivity under the influence of strong THz field. This mechanism of photoresponse saturation, which is due to the mobility decrease in high ac electric field, should exist for any type of field effect transistor detectors.
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