Abstract
We have studied the photoluminescence (PL) of a lightly Se-doped GaAs/AlGaAs quantum well under both above-gap and below-gap excitation (AGE and BGE, respectively) and observed a saturation of the PL quenching with increasing the BGE power for the first time. The PL quenching saturation was attributed to the trap-filling effect of electrons in one of below-gap states. An additional condition of the trap-filling regime in the rate-equation analysis enabled us to determine recombination parameters of two interacting below-gap states quantitatively. A numerically obtained result explained the measured dependence of the PL quenching on the BGE power fairly well.
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