Abstract
ABSTRACTThe existence of saturation (or steady state) in the density of light-induced defects in amorphous Si:H is shown to have major importance for the interpretation of the nature and origin of these defects. First, a number of characteristics of the steady-state and transient responses to light and temperature are described and contrasted. These lead to the conclusion that the saturation value is the only useful criterion of the number of defects in these materials. We then describe a new atomic model for defects, unifying both dopant-induced and light-induced defects. This model invokes foreign atoms in defects, and saturation reflects the limitation imposed by the numbers of such atoms. Many other observed properties of defects are explained by this model.
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