Abstract
The characteristics of low temperature-grown GaAs photoconductive antenna (PCA) terahertz detectors probed by 1.56 μm laser pulses are investigated. The influence of TM and TE polarized probe, as well as the saturation characteristics are studied for 2 μm- and 5 μm-gap PCA’s. Different polarization characteristics at low probe powers and at the saturation regimes were observed. Results are explained in terms of the polarization-dependent photocarrier distribution at the PCA gap arising from tight focusing. This work also demonstrates using a 1.56 μm probe for a GaAs PCA to achieve ~60 dB SNR; matching its performance characteristics for above-bandgap probes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
