Abstract
Saturated drift velocities of electrons in the direction parallel to the crystal axis have been determined for the first time for a number of silicon carbide polytypes (4H, 6H, 8H, and 21R) by investigating the current-voltage characteristics of novel three-terminal n+-p-n+ structures intentionally designed for the purpose. The values of these velocities are 3.3×106, 2×106, 1×106, and 4×103 cm/s respectively. These results are in qualitative agreement with a picture involving the miniband electronic structure caused by a natural superlattice in SiC. Experiments confirm the correlation between drift velocity and width of the first miniband in the various polytypes.
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