Saturated dot density of InAs∕GaAs self-assembled quantum dots grown at high growth rate

Abstract

The variation in dot density, dot size, and photoluminescence intensity in two series of 1.8 and 2.5 ML InAs quantum dots (QDs) as a function of InAs growth rate has been investigated. As the growth rate increases from 0.14to3.60ML∕s, the average dot lateral size reduces by half, whereas the dot density increases five times. Nonlinear relationships were observed between dot density, dot size, and growth rate. The dot density is found to saturate at a growth rate of 3ML∕s. High dot density of 7.76×1011cm−2 has been demonstrated and is beneficial for applications in high power QD devices.