Abstract
A high temperature sandwich structured power module for high temperature SiC power semiconductor devices has been accomplished. Problems were found in the high temperature building-up process of the module caused by excess warpage of the ceramic substrate. Also the high temperature operation of the power module brings an excess warpage of the structure caused by parts having different coefficients of thermal expansion (CTEs) from each other. In this paper, some countermeasures to overcome the problems are demonstrated.
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