Abstract
We report on a large-scale simulation study of the sample-orientation effects in solid-state high-harmonic generation, utilizing a fully three-dimensional GaAs model in conjunction with a solver for semiconductor Bloch equations that faithfully reflects the material symmetry and accounts for the optical response from the entire Brillouin zone. The simulations, qualitatively compared to two sets of independent measurements, demonstrate that the orientation-resolved high-harmonic spectra represent an effective tool for rigorous testing of material models. The results are relevant for the future development of all-optical reconstruction of electronic band-structure from the solid-state high-harmonic generation measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
