Abstract
Here in, properties of samarium-doped indium-tin-oxide (ITO:Sm) films deposited by DC-magnetron sputtering, and organic light-emitting devices (OLEDs) using an ITO:Sm film as an anode were investigated. The electrical resistivity of the ITO:Sm films increased with Sm doping. The work function of each ITO:Sm film (5.2-5.7 eV) was higher than that of an ITO film (4.8 eV). The crystal structure of the ITO:Sm films was In₂O₃-type when the doping ratio of Sm in the film was up to 5 at.%, and the structure was amorphous in more strongly samarium-doped films. The properties of the OLEDs were varied by the doping ratio of samarium in the ITO:Sm electrodes. The OLEDs with the ITO:Sm electrode exhibited higher efficiency than that of an ITO-based control device at the same current density.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
