Safe Operating Area of GaAs HBTs Based on Sub-Nanosecond Pulse Characteristics

Abstract

Using a novel sub-nanosecond pulse current-voltage measurement technique, InGaP/GaAs heterojunction bipolar transistors (HBTs) were shown to survive strong impact ionization and to have a much larger safe operating area (SOA) than previously measured or predicted. As the result, an empirical model for impact ionization with both voltage and current dependence was extracted and added to a commercially available HBT model. The modified model could predict the HBT characteristics across the enlarged SOA, as well as the performance of ultra-wideband pulse generators and the ruggedness of continuous wave Class-C power amplifiers.