SAF exhibits better resistance to roughness edge than single-free layer

Abstract

Switching behavior and spin configuration of single-free layer and SAF-free layer with rough edge and under stray field are studied with micromagnetic simulation using Landau–Lifshize–Gilbert equation. From the simulation results, the R–H loops of single free layer in MTJs have some kinks. However, junctions with SAF-free layers exhibit kink-free R–H loops. Because of the enclosed magnetic flux of the SAF-free layer, unbalanced SAF-free layer shows kink-free switching, even with pronounced fabrication defects at the memory element boundaries.