Abstract
The photoelectrochemical (PEC) liftoff results and the performances of fabricated vertical light-emitting diodes (LEDs) among four samples of different PEC etching sacrificial structures are compared. With a dopant-graded n-GaN sacrificial layer, the PEC liftoff time is decreased. With an n-AlGaN etching-stop layer, the roughness of PEC-etching surface is significantly reduced for simplifying the following device process. Illuminated by an ultraviolet LED array at 365 nm in emission wavelength, the PEC liftoff of a 2-in wafer with device isolation can be completed in 25 min. The performances of the fabricated vertical LEDs with different sacrificial structures are similar.
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