Abstract
A novel sacrificial chemical vapor deposition film etch-back process for Cu air-gap interconnects was developed. The etched-back Cu surfaces were analyzed by X-ray photoelectron spectroscopy. The electrical characteristics and the stress induced voiding reliability were evaluated. The CF 4 etch-back process was found not to degrade interconnect reliability. A four-level dual damascene Cu interconnect structure was successfully fabricated, and its effective dielectric constant was 2.8, 32% lower than that of a conventionally fabricated one. In situ N 2 or Ar plasma treatments after etch-back were investigated to reduce the Cu degradation.
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