Abstract
On the one hand, direct hybrid bonding is foreseen to revolutionize semiconductor device integration, allowing the seamless 3D interconnection of diverse materials with distinct properties. On the other hand, Surface Activation Bonding (SAB) is a powerful technique within the field of low-temperature bonding, offering enhanced bonding strength and compatibility with a wide range of materials. By dealing with the possibilities of SAB, this paper demonstrates the possibility of realizing a Cu-oxide direct hybrid bonding with a 5 µm pitch interconnections at ambient temperature. This success highlights the potential of SAB as a critical enabler for low-temperature hybrid bonding and its potential impact on next-generation semiconductor devices.
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