S2E simulation of an ERL-based high-power EUV-FEL source for lithography

Abstract

Energy recovery linac (ERL) based extreme ultraviolet (EUV) free electron lasers (FELs) are candidates of a next-generation high-power EUV source for lithography. An ERL-based EUV FEL source has been designed in order to demonstrate the feasibility of generating a 10-kW class EUV power. Start-to-End (S2E) simulation including the injection beam optimization, bunch compression, FEL lasing and bunch decompression is performed for the designed EUV source. As a result it is demonstrated that the EUV FEL can produce high power more than 10 kW at 10 mA and that the electron beam can be well transported throughout the EUV source without beam loss.