Abstract
Turning of single crystal silicon on a (100) surface was carried out using straight-nosed single crystal diamond cutting tool with a rake angle of -20°, and a side cutting edge angle of 5°. This side cutting edge angle enables the turning of silicon in high depth of cut. The surface roughness of the work piece was about 20nm PV, when the feed speed of the tool was 0.3mm/min and 0.6mm/min, depth of cut was 10μm, revolution speed of the work piece was 3000min^<-1>. During the turning of silicon, cutting force was measured by using cutting force dynamometer, and relation between the cutting force and tool feed speed was also investigated.
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