Abstract
The representation of noise sources in terms of signal flow graph equivalents is derived, enabling one to model noisy electron devices in terms of their S-parameters.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE transactions on microwave theory and techniques
Paper Title
Journal
Date
