Abstract
As the main pollutant in the air, NO2 is hugely harmful to the environment and health. It is crucial to develop a room temperature NO2 gas sensor with high response and good selectivity. In this work, S-doped SnO2 was successfully prepared by annealing with SnS nanoparticles as the precursor. S-doped SnO2 showed excellent response to 5 ppm NO2 (10.7), with a fast response (27 s) and recovery times (32 s), and good selectivity at room temperature (RT). The excellent NO2 sensitivity of S-doped SnO2 is attributed to its large specific surface area and large charge transfer between the substrate and NO2. This work can be extended to prepare high-performance NO2 gas sensors by annealing other transition metal dichalcogenides.
Published Version
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