Abstract
The first MMIC amplifier using Ga0.51In0.49P/GaAs MISFETs grown by GSMBE as active devices was fabricated in our laboratory. This monolithic amplifier achieved a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were consistent with simulated results, and demonstrated the high potential of the applications of Ga0.51In0.49P/GaAs MISFETs to MMICs. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 188–190, 1999.
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