Abstract
High power internally-matched 4H-SiC MESFET with a total gate width of 4×27mm was demonstrated. The double p-type buffer layers were used for preventing electrons from entering the buffer and reaching the substrate traps. The peak of the electric field in the edge of the gate is restrained by the double recess gate structure, which is advantageous to the high break down voltage. A thermal oxide layer was grown and subsequently etched to remove etch-induced damage. The ohmic contact resistivity of 2 ×10-6Ω•cm2 was achieved. The pulsed output power, gain and drain efficiency of the internally-matched 4x27mm SiC MESFET measured at 2GHz were 300W, 9.2dB, and 24.8%, respectively.
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