S-대역 300 W급 GaN HEMT 고조파 튜닝 내부 정합 전력증폭기

Abstract

Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257～323 W, a drain efficiency of 64～71%, and a power gain of 11.5～14.0 dB at 2.62～2.69 GHz. The LTE-based measurement shows a drain efficiency of 42～49% and an ACLR of less than −30 dBc(excluding 2.62 GHz) at an average power of 79 W.