Abstract
Decomposition reaction of monosilane in glow discharge plasma of both direct (DC) and alternating current (AC) have been performed. The possibility of nanosilicon synthesis using the glow discharge plasma has been shown. The Raman spectroscopy is applied to study the phase composition and granulometric analysis of the obtained nanosilicon samples. The possibility of the structure and size control of amorphous silicon films with nano crystalline inclusions (a-Si:H/c-Si + nc-Si) by varying pressure and composition of a gas mixture in the process of synthesis has been demonstrated.
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