Abstract
Alloying VO2 by Ru incorporation (RuxV1−xO2) should decrease the insulator–metal-transition (IMT) temperature due to the unique semi-metallic properties of RuO2. We deposit high-quality RuxV1−xO2 thin films by pulsed laser deposition on (0001) sapphire substrates. We investigate the structural, electrical, and optical properties of the RuxV1−xO2 alloy films using x-ray diffraction, x-ray photoelectron spectroscopy, UV-Vis–NIR spectrophotometry, and four-point-probe resistivity measurements. Our results confirm that Ru alloying of VO2 reduces effectively the IMT temperature while retaining the IMT characteristics of the material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
