Abstract
Amorphous GeSe2 films with Ag overlayers have been illuminated in situ in a Rutherford backscattering chamber and the evolution of the silver depth profile as a function of illumination time has been studied. The silver distribution in the doped region is found to be steplike as had earlier been seen in the system Ag/As2S3 and the composition of the photodoped product is approximately Ag1.1GexSe3−x. During the course of the reaction the silver/glass interface develops irregularities possibly due to the formation of silver islands.
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