Abstract
Rutherford backscattering (RBS) with 17MeV 19F is used to obtain depth profiles of ion-implanted Ge both before and after pulsed excimer (XeCl) laser annealing. The as-implanted Ge samples show a reduction of at least a factor of two in the Ge density to a depth of ≈ > 0.3 /gmm, and dopant profiles of similar width following room-temperature implantations of In, Sb and Bi at 350 keV. The heavy ion projectile provides distinct kinematic advantages in the present work with a high mass substrate and deep dopant distributions. Annealing with several ≈ 15 nsec laser pulses (λ = 308 nm) restores the surface Ge density and produces epitaxial regrowth. For Sb implants the dopant incorporation exceeds the equilibrium solubility limit by a factor of 50.
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