Abstract
Zinc lead sulphide ternary thin films were prepared by chemical spray pyrolysis on soda lime glass substrates using zinc acetate, lead acetate, and thiourea sources precursor. The films were characterized using Rutherford backscattering (RBS) spectrometry, energy dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), and X-ray diffractometry (XRD). RBS studies revealed variation in thickness and stoichiometry of the films with respect to compositional substitution between Zn and Pb, thereby giving effective composition ZnxPb1-xS, where x=0, 0.035, 0.069, 0.109, 0.176, and 0.217. Film thickness obtained by length conversion ranged from 81.02 nm to 90.03 nm. Microstructural analyses also indicated that the growth and particle distribution of the films were uniform across substrate’s surface. Diffraction studies showed that the films possess FCC crystalline structure. Crystallite size reduced from 14.28 to 9.8 nm with increase in Zn2+ in the ZnxPb1-xS samples.
Highlights
Thin films of metal chalcogenides Pb, Cd, andZn have received much attention due to their importance in photovoltaic and optoelectronic semiconductor devices mostly due to the fulfillment of some of the requirements that are essential for device fabrication [1,2,3]
Some technical challenges have to be surmounted in order to prepare chemically stable thin films that could be widely used in optoelectronic device fabrication such as solar cell, light emitting diode, and photodiode
We present results on zinc lead sulphide (Znx Pb1−x S) thin films deposited on soda lime glass substrate using chemical spray pyrolysis
Summary
Thin films of metal chalcogenides Pb, Cd, andZn have received much attention due to their importance in photovoltaic and optoelectronic semiconductor devices mostly due to the fulfillment of some of the requirements that are essential for device fabrication [1,2,3]. We present results on zinc lead sulphide (Znx Pb1−x S) thin films deposited on soda lime glass substrate using chemical spray pyrolysis. Rutherford backscattering spectroscopy (RBS) was essentially used to study thickness profile and stoichiometric compositions of the films.
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