Abstract
He + ion channeling at 2.0 and 2.25 MeV has been used to study Au decoration of cavities formed in (100) Si. Such samples are found to be ideal markers for studying channeled stopping power effects in Si. Results obtained are in good agreement with literature stopping power values. However, much larger energy widths of the Au profile are observed in channeling directions compared with energy straggling in random orientations. This effect is found to complicate analysis of Au distributions and angular scans, and can lead to analysis artifacts. Channeling analysis has also been applied to Au atom location at cavities and results indicate complex behaviour with marked differences between Au which decorates cavity walls and Au which has precipitated at cavities.
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