Abstract
The possibility of Ru electroplating for application as the bottom electrode in high density dynamic random access memory (DRAM) capacitors was investigated. Prior to Ru electroplating on a TiN substrate, HF cleaning and Pd activation were performed. Removal of Ti oxide from the TiN substrate by HF treatment enabled Pd activation, which enhanced the nucleation of Ru on TiN substrate. Optimized pretreatments led to a continuous Ru film deposition. The surface roughness was measured to be 4.4 nm at 45 nm Ru film on the bare substrate. Moreover Ru electroplating method was also applied to a capacitor node-type TiN wafer. The deposition rate of Ru on the patterned wafer was the same as that on a bare wafer. The film showed 93% step coverage and good adhesion, comparable to CVD Ru films. © 2004 The Electrochemical Society. All rights reserved.
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