Abstract
Scanning ion microscopy applications of novel focused ion beam (FIB) systems based on ultracold rubidium (Rb) and cesium (Cs) atoms were investigated via ion-induced electron and ion yields. Results measured on the Rb+ and Cs+ FIB systems were compared with results from commercially available gallium (Ga+) FIB systems to verify the merits of applying Rb+ and Cs+ for imaging. The comparison shows that Rb+ and Cs+ have higher secondary electron (SE) yields on a variety of pure element targets than Ga+, which implies a higher signal-to-noise ratio can be achieved for the same dose in SE imaging using Rb+/Cs+ than Ga+. In addition, analysis of the ion-induced ion signals reveals that secondary ions dominate Cs+ induced ion signals while the Rb+/Ga+ induced signals contain more backscattered ions.
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Schedule a callMore From: Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
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