Abstract
The Heusler-type compound of ${\mathrm{Ru}}_{2}\mathrm{NbGa}$ has been successfully synthesized. X-ray analysis confirms that ${\mathrm{Ru}}_{2}\mathrm{NbGa}$ crystallizes in a cubic $L{2}_{1}$ structure. The electronic properties of ${\mathrm{Ru}}_{2}\mathrm{NbGa}$ have been characterized by means of the transport and nuclear magnetic resonance (NMR) measurements. The temperature dependence of the electrical resistivity exhibits a typical semimetallic behavior. The NMR spin-lattice relaxation rate shows activated behavior at higher temperatures, attributing to the thermally excited carriers across a pseudogap. We have also deduced a low Fermi-level density of states (DOS), being consistent with the semimetallic characteristic for ${\mathrm{Ru}}_{2}\mathrm{NbGa}$. In addition, we have performed first-principles total-energy calculations including ${G}_{0}{W}_{0}$ and $G{W}_{0}$ corrections for band gaps to investigate the electronic band structure of ${\mathrm{Ru}}_{2}\mathrm{NbGa}$. The calculated result reveals an indirect overlap between electron and hole pockets that leads to a residual DOS at the Fermi level, providing a consistent explanation for the experimental observations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
